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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  An Investigation of Scanning Capacitance Microscopy on Iron-Contaminated p-Type Silicon

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12527

    Title: An Investigation of Scanning Capacitance Microscopy on Iron-Contaminated p-Type Silicon
    Authors: Chang,M. N.
    Chang,T. Y.
    Pan,F. M.
    Wu,B. W.
    Lei,T. F.
    教師: 張慶元
    Date: 2001
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS Volume: 4 Issue: 9 Pages: G69-G71 Published: SEP 2001
    Keywords: Semiconducting silicon
    Electric conductivity of solids
    Atomic force microscopy
    Transmission electron microscopy
    Abstract: Scanning capacitance microscopy (SCM) is employed to examine iron-contaminated p-type Si samples. For slightly contaminated samples, a dc voltage of -0.8 V, applied between the sample and the conductive tip, induces positive trapped charges. Owing to the existence of these charges, the region containing trapped charges exhibits an obviously low dC/dV signal. According to contact-mode atomic force microscopy results, the surface morphology has little effect on the SCM signal. The experimental results indicate that SCM is capable of detecting the distribution of oxidation-related defects which cannot otherwise be easily observed by atomic force microscopy and transmission electron microscopy.
    Relation Link: http://www.electrochem.org/
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12527
    Appears in Collections:[電機工程學系] 期刊論文
    [積體電路設計技術研發中心] 期刊論文

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