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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  AlGaN/GaN high electron mobility transistor (HEMT) reliability

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12989

    Title: AlGaN/GaN high electron mobility transistor (HEMT) reliability
    Authors: Pavlidis, D.
    Valizadeh, P.
    Hsu, S.H.
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: aluminium compounds
    gallium compounds
    high electron mobility transistors
    III-V semiconductors
    Abstract: The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain current and power degradation observed following RF stress. Technologies based on sapphire, SiC and Si substrates are considered. The impact of process such as passivation, as well as design i.e. barrier layer are considered. DC and microwave properties are considered in the study. Low frequency noise is also discussed in conjunction with degradation following stress
    Relation Link: 2005 13th European Gallium Arsenide and other Compound Semiconductors Application Symposium
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12989
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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