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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12992


    Title: Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs
    Authors: Hsu, S.S.H.
    Pavlidis, D.
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: III-V semiconductors
    aluminium compounds
    gallium compounds
    high electron mobility transistors
    semiconductor device measurement
    Abstract: The dispersion effects of transconductance (g/sub m/) and output resistance (R/sub ds/) in AlGaN/GaN MODFETs were investigated. The dispersion effects of g/sub m/ were found to be much smaller than those of R/sub ds/. Devices under different biases show g/sub m/ dispersion of /spl sim/ 4% to 7%, while R/sub ds/ dispersion of /spl sim/ 19 % to 44% in a frequency range of 50 Hz to 100 kHz. The trapping-detrapping time constants of the dispersion effects were extracted by employing a novel distributed RC network and carrier injection current sources. The time constants estimated are in a range of /spl sim/ 1.5 /spl mu/s to 1 ms.
    Relation Link: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1252377
    http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12992
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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