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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/12993


    Title: First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs
    Authors: Xin Zhu
    Jing Wang
    Pavlidis, D.
    Shuohung Hsu
    Date: 2005
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: III-V semiconductors
    MMIC amplifiers
    arsenic compounds
    bipolar MMIC
    circuit feedback
    Abstract: A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dB/spl Omega/ transimpedance, and a corresponding gain-bandwidth of 1.13 THz-/spl Omega/ while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good gain-bandwidth-product per dc power figure-of-merit (GBP/P/sub dc/) of 1.05 GHz/mW.
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/12993
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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