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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13000

    Title: STI effect on flicker noise in 0.13-μm RF NMOS
    Authors: Chih-Yuan Chan
    Jun-De Jin
    Yu-Syuan Lin
    Hsu, S.S.H.
    Ying-Zong Juane
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: carrier mobility
    flicker noise
    isolation technology
    Abstract: This paper reports the effect of shallow-trench-isolation (STI) on generation-recombination (G-R) noise and flicker noise variation in 0.13-μm RF MOSFETs for the first time. The devices with relatively small finger widths (W = 1 μm/Nfinger = 40 and W= 5 μm/Nfinger = 8) presented more pronounced G-R noise compared to those with W= 10 μm/Nfinger = 4 devices. In addition, a wide variation of noise levels was observed for devices with smaller finger widths and more finger numbers. The results can be explained by the effect of STI, which affects the carrier mobility due to the compressive stress, also generates traps at the edge of STI region resulting in G-R noise. Moreover, the metals employed in 0.13-μm CMOS technology, Cu and Co, may also be responsible for the G-R noise observed in the devices
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13000
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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