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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13003


    Title: Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs
    Authors: Hsu, S.S.H.
    Valizadeh, P.
    Pavlidis, D.
    Moon, J.S.
    Micovic, M.
    Wong, D.
    Hussain, T
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: HEMTs
    RF
    AlGaN/GaN HEMT
    Abstract: The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are reported. Reduced drain current ( /spl sim/ 67 mA/mm in the saturation region) and similar output power and power-added efficiency were found after RF stress. Transconductance dispersion is small before and after RF stress while output resistance dispersion reduces after RF stress. Tests performed under UV light suggest that the observed results may be attributed to trapping in the AlGaN/GaN HEMT layers.
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13003
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈米工程與微系統研究所] 會議論文

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