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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13061


    Title: The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications
    Authors: Hou, Chun-Lin
    Lee, Joseph Ya-Min
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: MFIS
    PZT
    Abstract: The electrical characteristics of metal-ferroelectric-insulator-silicon (MFIS) structures are studied. The ferroelectric layer is lead-zirconate-titanate (PZT) and the insulator layer is Ta2O5. The orientation of the C-V hysteresis loop depends on both the polarization of the ferroelectric layer and the trapped charges injected into the insulator layer. These two effects are opposite to each other. The C-V orientation is counterclockwise when the applied voltage is below 7 V and clockwise above 7 V. The C-V memory window first increases and then decreases with the applied sweep voltage. These phenomena are explained by the polarization and the charge trapping effects.
    Relation Link: Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on, 30 June-5 July 2002, On page(s): 181- 184
    http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13061
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文

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