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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba0.5,Sr0.5)TiO3 gate dielectric


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13063


    Title: The fabrication and characterization of metal-oxide semiconductor field-effect transistors and gated diodes using (Ba0.5,Sr0.5)TiO3 gate dielectric
    Authors: Liu, Yu-Rung
    Ya-Min Lee, Joseph
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Keywords: Semiconductor diodes
    Titanium oxides
    Barium compounds
    Dielectric materials
    Semiconductor device manufacture
    Abstract: N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using barium strontium titanate (Ba0.5,Sr0.5)TiO3 (BST) as the gate dielectric are successfully fabricated. The BST films are deposited by RF magnetron sputtering. The IDS-VDS and IDS-VGS characteristics are measured. The electron mobility is about 206.6 cm2/Vs. The subthreshold swing is about 136.7 mV/dec. The interface trapped charge density Dit, the surface recombination velocity, and the minority carrier lifetime in the field-induced depletion region measured from gated diodes are 4.87 ?1014 cm-2eV-1, 3.96 ?104 cm/s, and 1.2 ?10-8 s, respectively.
    Relation Link: XIIth Semiconducting and Insulating Materials Conference, June 30-July 5 2002, pp. 288-291, Smolenice Castle, Slovakia.
    http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13063
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文

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