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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13440


    Title: A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
    Authors: Chung, S.S.
    Liu, Y.R.
    Yeh, C.F.
    Wu, S.R.
    Lai, C.S.
    Chang, T.Y.
    Ho, J.H.
    Liu, C.Y.
    Huang, C.T.
    Tsai, C.T.
    教師: 張慶元
    Date: 2005
    Publisher: Institute of Electrical and Electronics Engineers Inc.
    Relation: VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on 14-16 June 2005 Page(s):86 - 87
    Keywords: CMOS integrated circuits
    Ge-Si alloys
    MOSFET
    carrier mobility
    hot carriers
    Abstract: In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge outdiffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13440
    Appears in Collections:[電機工程學系] 會議論文
    [積體電路設計技術研發中心] 會議論文

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