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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Electrical transport through carbon nanotube junction


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13468


    Title: Electrical transport through carbon nanotube junction
    Authors: Chiu, P.W.
    Kim, G.T.
    Gu, G.
    Philipp, G.
    Roth, S.
    Date: 2001
    Publisher: American Institute of Physics
    Keywords: carbon nanotubes
    charge exchange
    rectification
    Schottky barriers
    semiconductor-metal boundaries
    thermionic electron emission
    Abstract: © 2001 American Institute of Physics-Metal-semiconductor crossed carbon nanotube junction was prepared by adsorption of carbon nanotubes on Si/SiO2 substrate with predefined electrode contacts. The Schottky barrier was formed in the contact region due to the charge transfer from the metallic tube to semiconducting tube. The charge transport was strongly modified by the formation of barrier, leading to pronounced rectifying behavior. The results were modeled using conventional thermoionic emission theory. The ideality factor in diode is 5.8 eV at room temperature and increases as raising operating temperature.
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13468
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈微與材料科技中心] 會議論文

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