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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/13469

    Title: Towards carbon nanotube in-plane transistors
    Authors: Chiu, PW
    Duesberg, GS
    Dettlaff-Weglikowska, U
    Roth, S
    教師: 邱博文
    Date: 2002
    Publisher: American Institute of Physics
    Keywords: adsorption
    carbon nanotubes
    chemical reactions
    electron beam lithography
    field effect transistors
    metal-insulator transition
    nanotube devices
    semiconductor materials
    Abstract: © 2002 American Institute of Physics-Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. A T-shape heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. Electronic devices were prepared by adsorption of functionalized nanotube junctions on Si/SiO2 substrate followed by standard e-beam lithography. The charge transport through the junction was fund to be strongly modified by the in-plane nanotube mechanically, leading to pronounced metal-insulator transition.
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/13469
    Appears in Collections:[電機工程學系] 會議論文
    [電子工程研究所] 會議論文
    [奈微與材料科技中心] 會議論文

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