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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/31963

    Title: 0.25um BCD 製程之BJT元件直流特性分析
    Other Titles: The DC Characteristic Analysis of 0.25um BCD Process BJT Devices
    Authors: 李建融
    Jian-Rong Li
    教師: 龔正
    Date: 2007
    Keywords: 雙極性接面電晶體
    DC Characteristic
    IB curve
    Abstract: 所謂的BCD製程技術,即是將Bipolar、CMOS及DMOS等電晶體元件整合於單一晶片中,可形成所謂智慧型功率積體電路(Smart Power ICs)的製程技術,而其中的Bipolar元件主要功用為提供此電路所需的高頻與高驅動電流等功能。本篇論文的主要目的即是在探討0.25um BCD製程中BJT元件之直流特性。一方面先量測分析實際BJT元件的直流特性;另一方面則是以軟體來模擬探討BJT元件的內部電性。並且研究Gummel Plot上在較小VBE偏壓值時,IB曲線出現向下尖突之原因。希望藉由瞭解BJT元件在各種直流特性上的表現與成因,來改善其特性,進而提高整體功率積體電路之性能。
    The so-called BCD process technology is to integrate transistor devices, such as Bipolar, CMOS and LDMOS, into one chip so as to form a Smart Power integrated circuit. And the main function of a Bipolar device is to provide high-frequency and high-drive current to meet the needs of the circuit. The purpose of the paper is to discuss the DC characteristic of a BJT device in 0.25um BCD process. On the one hand, we measure and analyze the DC characteristic of an actual BJT device; on the other hand, we use the software to stimulate and explore the internal electrical properties of a BJT device. Furthermore, we analyze the reasons of a downward peak in the IB curve when there is a lower VBE bias on the Gummel plot. It is our hope that by understanding the performance and cause of the DC characteristics of BJT device, we can improve its properties, and moreover, advance the entire performance of power integrated circuits.
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    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/31963
    Source: http://thesis.nthu.edu.tw/cgi-bin/gs/hugsweb.cgi?o=dnthucdr&i=sGH000935051.id
    Appears in Collections:[電子工程研究所] 博碩士論文

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