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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電子工程研究所 > 博碩士論文  >  0.35um製程之橫向金氧半場效電晶體特性分析


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/33262


    Title: 0.35um製程之橫向金氧半場效電晶體特性分析
    Other Titles: The Characteristic Analyses of 0.35um Process LDMOSFETs
    Authors: 薛婉君
    Jeng Gong
    Wan-Jyun Syue
    教師: 龔正
    薛婉君
    Date: 2007
    Keywords: 串聯電阻
    汲極導致能障下降
    橫向式金氧半場效電晶體
    on-resistance
    DIBL
    LDMOSFETs
    Abstract: 此篇論文是以0.35um製程之橫向金氧半場效電晶體為主體,分成量測與模擬兩個部分的特性來探討分析,ㄧ是使用HP4156及Keithley 236量測元件的Id-Vd、Id-Vg曲線來分析導通電阻的組成及DIBL特性參數的萃取,另ㄧ方面是以台積電目前已生產0.35um製程的高壓元件,使用Tsuprem4及Medici模擬軟體進行部份結構調整,期許能達到更佳的效果。
    In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring the Id-Vd and Id-Vg curves with HP4156 and Keithley 236 systems in order to analyze the components’ electrical properties such as on-resistance and breakdown voltage as well as to extract characteristic parameter of DIBL. On the other hand, TCAD tools like Tsuprem4[1] and Medici [2]are used to modulate some portion of the device structure with a well-built 0.35um high voltage process technology to optimize the device performance. Satisfactory results are obtained.
    Isbasedon: [1] AVANT! TSUPREM-4, Two-Dimensional Process Simulation Program,Version-2000.4.0
    [2] AVANT! MEDICI, Two-Dimensional Device Simulation Program, Version-2000.4.0
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    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/33262
    Source: http://thesis.nthu.edu.tw/cgi-bin/gs/hugsweb.cgi?o=dnthucdr&i=sGH000935035.id
    Appears in Collections:[電子工程研究所] 博碩士論文

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