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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電子工程研究所 > 博碩士論文  >  0.35和0.25微米BCD製程之橫向式蕭特基二極體元件設計

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/34239

    Title: 0.35和0.25微米BCD製程之橫向式蕭特基二極體元件設計
    Other Titles: The design of Lateral Schottky Barrier Diode in 0.35um and 0.25um BCD process
    Authors: 黃建豪
    Huang, Chien-Hao
    Gong, Jeng
    Huang, Chin-Fang
    教師: 龔正
    Date: 2009
    Keywords: 蕭特基
    Abstract: 本篇論文針對蕭特基二極體以0.35um和0.25um BCD製成設計做討論。我們使用了2D模擬軟體去分析其元件特性,以提升蕭特基二極體的崩潰電壓,及改善導通電阻與漏電流之間的取捨為目標。除了2D模擬軟體提供我們由元件的橫截面上設計蕭特基二體外,3D軟體使我們可以更有彈性的由元件俯視面上做不同光罩的設計。最後,實驗量測結果將可以確認我們的模擬分析是否正確。
    In this thesis, the development of integrated Schottky barrier diode (SBD) in 0.35um and 0.25um BCD technology is described. In order to improve the breakdown voltage, the trade off between on-resistance, and reverse leakage current, we use the simulation tools to analyze the characteristics of SBD. The two-dimensional simulation helps us to design SBD in the cross-sectional view. In addition, the three-dimensional simulation makes us have further improvement by flexible design in the device top patterns. Finally, the experimental results are given to confirm our analytic work.
    Isbasedon: [1]
    Dallago, E.; Sassone, G.; Delbo, S.; Gola, A.; Novarini, E.; “Integrated Schottky diodes in BCD5 technology for high frequency soft switched power converters”, Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
    Volume 3, 18-23 June 2000 Page(s):1583 - 1587 vol.3

    Dallago, E.; Passoni, M.; Sassone, G.; Venchi, G.; “A high efficiency integrable power converter with soft switching slew-rate control”, Industrial Technology 2000. Proceedings of IEEE International Conference on Volume 2, 19-22 Jan. 2000 Page(s):174 - 178 vol.1

    Schoen, K.P.; Woodall, J.M.; Cooper, J.A.; Melloch, M.R.; “Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers”, Electron Devices, IEEE Transactions on Volume 45, Issue 7, July 1998 Page(s):1595 – 1604

    B. Jayant Baliga, “Power Semiconductor Devices”, Copyright 1996 by PWS.

    Appels, J.A.; Vaes, H.M.J.; “High voltage thin layer devices (RESURF devices)”, in IEDM Tech. Dig., 1979, pp. 238-241,

    Ludikhuize, A.W.; “A review of RESURF technology”, Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on 22-25 May 2000 Page(s):11 – 18, Digital Object Identifier 10.1109/ISPSD.2000.856763

    Shammas, N.Y.A.; Eio, S.; “A novel technique to reduce the reverse recovery charge of a power diode”, Power Electronics and Applications, 2007 European Conference on 2-5 Sept. 2007 Page(s):1–8

    Synopsys; “Taurus TSUPREM-4 User Guide”, Version X-2005.10, October 2005

    Synopsys; “Taurus Medici User Guide”, Version Y-2006.06, June 2006

    Saitoh, W.; Omura, I.; Tokano, K.; Ogura, T.; Ohashi, H.; “Ultra low on-resistance SBD with p-buried floating layer”, Power Semiconductor Devices and ICs, 2002. Proceedings of the 14th International Symposium on 4-7 June 2002 Page(s):33 – 36

    Tu, S.L.; Baliga, B.J.; “Controlling the characteristics of the MPS rectifier by variation of area of Schottky region”, Electron Devices, IEEE Transactions on
    Volume 40, Issue 7, July 1993 Page(s):1307 – 1315

    SILVACO International; “ATHENA User’s Manual 2D PROCESS SIMULATION SOFTWARE”, Version 5.10.0.R, July 20, 2005

    SILVACO International; “ATLAS User’s Manual DEVICE SIMULATION SOFTWARE”, Version 5.10.R, April 14, 2006

    Naito, T.; Nemoto, M.; Nishiura, A.; Otsuki, M.; Kirisawa, M.; Seki, Y.; “Fine pattern effect on leakage current and reverse recovery characteristics of MPS diode”, Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on 4-7 June 2001 Page(s):227 – 230
    URI: http://nthur.lib.nthu.edu.tw/handle/987654321/34239
    Source: http://thesis.nthu.edu.tw/cgi-bin/gs/hugsweb.cgi?o=dnthucdr&i=sGH029663512.id
    Appears in Collections:[電子工程研究所] 博碩士論文

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