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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/39364

    Title: Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films
    Authors: Ming-Tsong Wang;Tsung-Hong Wang;Lee, J.Y.
    教師: 李雅明
    Date: 2005
    Relation: MICROELECTRONICS RELIABILITY , Volume 45 , Issue 5-6 , Pages 969-972 , MAY-JUN 2005
    Keywords: aluminium
    dielectric thin films
    electrical conductivity
    electron traps
    MIS capacitors
    Abstract: © 2005 Elsevier-The electrical conduction mechanism in zirconium oxide (ZrO2) thin films as a function of temperature T and electric field E was studied. Al/ZrO2/p-Si metal-insulator-semiconductor (MIS) capacitors were fabricated. With the Al electrode biased negative, the conduction mechanism in the electrical field of 0.81MV/cm<E<1.40MV/cm and in the temperature range of 375K<T<450K is found to be modified Schottky emission. The intrinsic barrier height between Al and ZrO2 is 1.06eV. At higher electrical fields of 1.50MV/cm<E<2.25MV/cm and higher temperatures of 375K<T<450K, the electrical conduction is dominated by modified Poole-Frenkel emission. The extracted trap barrier is 0.83eV. With the Al electrode biased positive, the conduction mechanism is found to be Schottky emission at the electrical field 0.20MV/cm<E<0.60MV/cm and higher temperature range of 425K<T<450K. The barrier height between Si and ZrO2 is 1.0eV. Based on these results, an energy band diagram of the Al/ZrO2/p-Si system is proposed.
    URI: http://www.elsevier.com/
    Appears in Collections:[電機工程學系] 會議論文

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