National Tsing Hua University Institutional Repository:Disorder controlled hole transport in MEH-PPV
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    National Tsing Hua University Institutional Repository > 工學院  > 化學工程學系 > 期刊論文 >  Disorder controlled hole transport in MEH-PPV


    题名: Disorder controlled hole transport in MEH-PPV
    作者: Anto Regis Inigo;Hsiang-Chih Chiu;Wunshain Fann;Ying-Sheng Huang;U-Ser Jeng;Tsang-Lang Lin;Chia-Hung Hsu;Kang-Yung Peng;Show-An Chen
    教師: 陳壽安
    日期: 2004
    出版者: American Physical Society
    關聯: PHYSICAL REVIEW B, American Physical Society, Volume 69, Issue 7, FEB 2004
    关键词: molecularly doped polymers
    conjugated polymers
    interchain interactions
    film morphology
    device performance
    polar additives
    摘要: ©2004 APS - We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.
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