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    NTHUR > College of Engineering  > Department of Chemical Engineering  > CHE Journal / Magazine Articles  >  Tapered Cu pattern metallization by electrodeposition through mask


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/39895


    Title: Tapered Cu pattern metallization by electrodeposition through mask
    Authors: Jenq,Shrane Ning;Wan,Chi Chao;Wang,Yung Yun;Li,Hung Wei;Liu,Po Tsun;Chen,Jing Hon
    Teacher: 萬其超
    Date: 2006
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS, Electrochemical Society, Volume 9, Issue 10, 2006, Pages C167-C170
    Keywords: Electrodeposition
    Metallizing
    Copper
    Thin film transistors
    Polyethylene glycols
    Additives
    Electrochemistry
    Abstract: ©2006 Electrochem - A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step.
    URI: http://www.electrochem.org/
    http://nthur.lib.nthu.edu.tw/handle/987654321/39895
    Appears in Collections:[Department of Chemical Engineering ] CHE Journal / Magazine Articles

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