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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41885

    Title: 1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
    Authors: Huang,Kun-Fu;Hsieh,Tung-Po;Yeh,Nien-Tze;Ho,Wen-Jeng;Chyi,Jen-Inn;Wu,Meng-Chyi
    教師: 吳孟奇
    Date: 2004
    Publisher: Elsevier
    Relation: JOURNAL OF CRYSTAL GROWTH,Volume 264,Issue 1-3,Pages 128-133,MAR 15 2004
    Keywords: Photoluminescence
    Metalorganic chemical vapor deposition
    Quantum dots
    Abstract: © 2004 Elsevier - In this paper, we investigate the effects of growth temperature and growth rate on the formation of InAs/GaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition. These QDs are formed with large InAs coverage (3.0MLs) and periodic growth interruption via the Stranski-Krastanow epitaxial growth mode. The photoluminescence (PL) spectra at 300K exhibit a red shift in peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As the growth rate increases from 0.05 to 0.2ML/s at a growth temperature of 500°C, the PL linewidth decreases and the PL intensity increases. These results are related to the In clusters and uniformity of InAs/GaAs QDs, which are observed by scanning electron microscopy (SEM). Finally, the room-temperature PL spectrum of InAs/GaAs QDs directly capped with GaAs layer shows an emission wavelength at 1.35μm and a narrow linewidth of 30.8meV.
    URI: http://www.elsevier.com/
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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