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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  AlGaInP light-emitting diode with tensile strain barrier reducing layer


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41895


    Title: AlGaInP light-emitting diode with tensile strain barrier reducing layer
    Authors: Su, Juh-Yuh;Wu, Meng-Chi;Chen, Wen-Bin;Su, Yan-Kun
    教師: 吳孟奇
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS,  Volume 24,  Issue 3,Pages 159-161, MAR 2003
    Keywords: III-V semiconductors
    aluminium compounds
    gallium compounds
    indium compounds
    light emitting diodes
    quantum well devices
    semiconductor device reliability
    semiconductor
    quantum wells
    valence bands
    Abstract: © 2003 Institute of Electrical and Electronics Engineers - A novel tensile strain barrier reducing (TSBR) structure is grown between window and cladding layers of multi-quantum-well (MQW)-AlGaInP light-emitting diodes (LEDs). The TSBR film (100 [similar to] 200 A of Ga0.65 In0.35 P) is of lattice size and valence band energy intermediate between those of window and cladding layers, thus reducing band offset and decreasing device forward bias from 2.55 V to 1.92 V at 20 mA, with concomitant improvements in dynamic resistance and junction heating. The TSBR layer increases power efficiency by 30% at 20 mA and up to 65% at high current conditions. The reduced junction heating of the with-TSBR design may be of significant advantage to device quality, reliability and lifetime, especially for high current applications.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/handle/987654321/41895
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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