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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  AlGaInP/gaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41898


    Title: AlGaInP/gaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy
    Authors: Lin,Jyh-Feng;Wu,Meng-Chyi;Jou,Ming-Jiunn;Chang,Chuan-Ming;Lee,Biing-Jye
    教師: 吳孟奇
    Date: 1994
    Publisher: Elsevier
    Relation: JOURNAL OF CRYSTAL GROWTH,Volume 137,Issue 3-4,Pages 400-404,APR 1994
    Keywords: Light emitting diodes
    Optoelectronic devices
    Semiconductor diodes
    Crystal growth
    Substrates
    Abstract: © 1994 Elsevier - Al0.33Ga0.32In0.35P/Ga0.65In0.35P double-heterostructure (DH) light-emitting diodes (LEDs) grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. We investigate the band gap energy as a function of Al composition in the undoped AlxGa0.65−xIn0.35P alloy with x = 0.0−0.195. Effects of Si and Zn doping on electrical properties have been examined by using disilane and dimethylzinc sources. The DH LED on a bare chip exhibits an emission wavelength around 615 nm and an external quantum efficiency of 0.156% at 20 mA.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/handle/987654321/41898
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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