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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41910

    Title: Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer
    Authors: Yang,Chien-Cheng;Wu,Meng-Chyi;Chuo,Chang-Cheng;Chyi,Jen-Inn;Lin,Chia-Feng;Chi,Gou-Chung
    教師: 吳孟奇
    Date: 2000
    Publisher: Elsevier
    Relation: SOLID-STATE ELECTRONICS,  Volume 44,Issue 8,Pages 1483-1486,AUG 2000
    Keywords: Light emitting diodes
    Semiconducting gallium compounds
    Semiconducting films
    Metallorganic vapor phase epitaxy
    Abstract: © 2000 Elsevier - The GaN homo-junction light-emitting diodes (LEDs) with multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 angstroms thick GaN nucleation layer grown at a low temperature of 525 °C and a 4 µm thick GaN epitaxial layer grown at a high temperature of 1025 °C. As compared to the conventional growth without buffer layer, the GaN LEDs with MBL will exhibit a low turn-on voltage, stronger electroluminescence intensity, and higher light output power. It is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.
    URI: http://www.elsevier.com/
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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