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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  Electrical and structural properties of Re/GaAs Schottky diodes

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41911

    Title: Electrical and structural properties of Re/GaAs Schottky diodes
    Authors: Lin,Chia-Chien;Wu,Meng-Chyi
    教師: 吳孟奇
    Date: 1999
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS,  Volume 85,Issue 7,Pages 3893-3896  ,APR 1 1999
    Keywords: Schottky barrier diodes
    Semiconducting gallium arsenide
    Current voltage characteristics
    Thermodynamic stability
    Abstract: © 1999 American Institute of Physics - This article presents the thermal stability of the electrical and structural properties of Re/GaAs Schottky diodes annealed in the temperature range 600–1000 °C. Results of the current–voltage measurement, 2 MeV He2+ ions Rutherfold backscattering, x-ray diffractometer, and transmission electron microscope were analyzed and discussed. The Re/GaAs diode, annealed at temperatures as high as 800 °C, typically has an ideality factor of ~ 1.14 and a barrier height of about 0.65–0.71 eV. It also exhibits a low sheet resistance, which is less than 10 /. With annealing temperature increases up to 900 °C, the interdiffusion between Re film and GaAs substrate was observed. Furthermore, the intermetallic compound Re3As7 is considered to form in the Re/GaAs sample annealed at 1000 °C. The experimental results provide evidence that the Re/GaAs interface is metallurgically inert up to 800 °C and therefore a Schottky barrier with highly thermal stability can be expected.
    URI: http://www.aip.org/
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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