National Tsing Hua University Institutional Repository:Electrical and structural properties of Re/GaAs Schottky diodes
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  Electrical and structural properties of Re/GaAs Schottky diodes


    题名: Electrical and structural properties of Re/GaAs Schottky diodes
    作者: Lin,Chia-Chien;Wu,Meng-Chyi
    教師: 吳孟奇
    日期: 1999
    出版者: American Institute of Physics
    關聯: JOURNAL OF APPLIED PHYSICS,  Volume 85,Issue 7,Pages 3893-3896  ,APR 1 1999
    关键词: Schottky barrier diodes
    Semiconducting gallium arsenide
    Current voltage characteristics
    Thermodynamic stability
    摘要: © 1999 American Institute of Physics - This article presents the thermal stability of the electrical and structural properties of Re/GaAs Schottky diodes annealed in the temperature range 600–1000 °C. Results of the current–voltage measurement, 2 MeV He2+ ions Rutherfold backscattering, x-ray diffractometer, and transmission electron microscope were analyzed and discussed. The Re/GaAs diode, annealed at temperatures as high as 800 °C, typically has an ideality factor of ~ 1.14 and a barrier height of about 0.65–0.71 eV. It also exhibits a low sheet resistance, which is less than 10 /. With annealing temperature increases up to 900 °C, the interdiffusion between Re film and GaAs substrate was observed. Furthermore, the intermetallic compound Re3As7 is considered to form in the Re/GaAs sample annealed at 1000 °C. The experimental results provide evidence that the Re/GaAs interface is metallurgically inert up to 800 °C and therefore a Schottky barrier with highly thermal stability can be expected.
    显示于类别:[電機資訊學院學士班] 期刊論文


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