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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  1.3-μm GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41927

    Title: 1.3-μm GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation
    Authors: Lee,Feng-Ming;Tsai,Chia-Lung;Hu,Chih-Wei;Huang,Kun-Fu;Wu,Meng-Chyi;Ko,Sun-Chien
    教師: 吳孟奇
    Date: 2007
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS,Volume 28,Issue 2,  Pages 120-122,FEB 2007
    Keywords: III-V semiconductors
    gallium compounds
    indium compounds
    quantum well devices
    silicon compounds
    surface emitting lasers
    wide band gap semiconductors
    Abstract: © 2007 Institute of Electrical and Electronics Engineers - In this letter, we investigate and characterize the 1.3-μ single-mode vertical-cavity surface-emitting lasers (VCSELs) with two GaInAsN strained multiple quantum wells as the active region. Surface relief technique and a thick silicon oxide were used for the spatial mode filtering and the planarization processing, respectively. The VCSELs with a 5-μm-diameter surface-relief aperture and a 12-μm-diameter oxide-confined aperture at room temperature exhibit a threshold current of 3 mA, a slope efficiency of 0.14 mW/mA, a maximum operation temperature of 90 °C and a single-mode behavior. These VCSELs show a maximum light output power of 1 mW for the single fundamental mode with a transverse-mode suppression of more than 30 dB and also show a clear eye-opening feature operated at 2.488 Gb/s and 12.6 mA.
    URI: http://www.ieee.org/
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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