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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機資訊學院學士班 > 期刊論文 >  Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/41978


    Title: Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector
    Authors: Huang CY;Ou TM;Chou ST;Tsai CS;Wu MC;Lin SY;Chi JY;Hsu BY;Chi CC
    教師: 吳孟奇
    Date: 2007
    Publisher: Elsevier
    Relation: THIN SOLID FILMS,Volume 515,Issue 10,Pages 4459-4461,26 2007
    Keywords: Quantum dots
    Si doping
    Quantum dot infrared photodetector
    MBE
    Abstract: © 2007 Elsevier - We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 x 10(11) cm(-2) were observed by atomic force microscope (AFM). From the high ratio of photoluminescence (PL) peak intensities from dot layer to that from wetting layer, we have concluded that high dot density caused the short diffusion length for carriers to be easily captured by QDs. Moreover, the Si-doped samples exhibited the multi-state transitions within the quantum dots, which were different to the single level transition of undoped sample. Besides, the dominant PL peaks of Si-doped samples were red-shifted by about 25 meV compared to that of the undoped sample. It should result from the dopant-induced lowest transition state and therefore, the energy difference should be equal to the binding energy of Si in InAs QDs.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/handle/987654321/41978
    Appears in Collections:[電機資訊學院學士班] 期刊論文

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