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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Formation and transistor behavior of carbon nanotube T-junctions

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/42247

    Title: Formation and transistor behavior of carbon nanotube T-junctions
    Authors: Po-Wen Chiu;Benoit, J.M.;Graupner, R.;Dettlaff, U.;Roth, S.
    教師: 邱博文
    Date: 2003
    Publisher: Materials Research Society
    Relation: Nanotube-Based Devices Symposium (Mater. Res. Soc. Vol.772), 2003, 193-200
    Keywords: SINGLE
    Abstract: © 2003 American Institute of Physics-We present the formation of intermolecular nanotube junctions and investigations of their transistor behavior. T-shape junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. An end-to-side or end-to-end heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. The chemically modified nanotube mats were characterized by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The incorporation of functional groups into nanotubes are first identified by XPS. The carbon binding energy shifts due to the doping effect by attached functional groups. This also leads to a pronounced shift of tangential vibration modes in Raman spectra. To investigate the electrical transport, functionalized nanotubes were deposited on Si substrates, and metal contacts were applied on top of the selected T-shape junctions. The bar of the "T" is used as a transistor channel and the leg of the "T" is used as a gate. In this configuration, the active area is confined to a few nanometers in all three dimensions and gain values of 100 and above are obtained.
    URI: http://www.mrs.org/
    Appears in Collections:[電機工程學系] 會議論文

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