English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13871871      Online Users : 55
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Impact of STI Effect on Flicker Noise in 0.13-μm RF nMOSFETs


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/42869


    Title: Impact of STI Effect on Flicker Noise in 0.13-μm RF nMOSFETs
    Authors: Chan, Chih-Yuan;Lin, Yu-Syuan;Huang, Yen-Chun;Hsu, Shawn S. H.;Juang, Ying-Zong
    教師: 徐碩鴻
    Date: 2007
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Electron Devices,IEEE Transactions,Volume 54, Issue 12, Dec. 2007,Page(s) 3383 - 3392
    Keywords: LOW-FREQUENCY NOISE
    SUBMICROMETER MOSFETS
    TRANSISTORS
    DEVICES
    MODEL
    Abstract: © 2007 Institute of Electrical and Electronics Engineers-This paper reports on the impact of shallow-trench isolation (STI) on flicker noise characteristics in 0.13-mu m PF nMOSFETs. The drain noise current spectral density was measured in both triode and saturation regions for a more complete study. The devices with a relatively small finger width and a large finger number (W = 1 mu m/N-finger = 40 and W = 5 mu m/N-finger = 8) presented more pronounced generation-recombination (G-R) noise characteristics compared to those with W = 10 mu m/N-finger = 4. In addition, a wide noise level variation of more than one order of magnitude was associated with the more obvious G-R noise components. The observed trends can be explained by the nonuniform stress effect of STI and also the associated traps at the edge of the gate finger between STI and the active region. To further study the noise mechanism, the single-finger devices with different STI-to-gate distances [SA (SB) = 0.6, 1.2, and 10 mu m] were investigated. The measured results provided a direct evidence of STI effect on flicker noise characteristics. The activation energy of the traps was extracted at various temperatures in a range from E-C - 0.397 to E-C - 0.54 eV. Moreover, the calculated standard deviation sigma(dB) showed a strong dependence of noise variation on device geometry (sigma(dB) = 2.95 dB for W = 1 mu m/N-finger = 40 and sigma(dB) = 1.54 dB for W = 10 mu m/N-finger = 4). The analysis suggests that the carrier number fluctuation model with the correlated mobility scattering is more suitable for the noise characteristics in these devices.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/handle/987654321/42869
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File SizeFormat
    2030121010015.pdf0KbAdobe PDF279View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback