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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A 0.18-μm CMOS Balanced Amplifier for 24-GHz Applications

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/42944

    Title: A 0.18-μm CMOS Balanced Amplifier for 24-GHz Applications
    Authors: Jin, Jun-De;Hsu, Shawn S. H.
    教師: 徐碩鴻
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Solid-State Circuits,IEEE Journal,Volume 43, Issue 2, Feb. 2008,Page(s) 440 - 445
    Abstract: c 2008 Institute of Electrical and Electronics Engineers-A 24-GHz balanced amplifier (BA) with a 45-dB gain is realized in 0.18-mu m CMOS technology. An effective technique, pi-type parallel resonance, is proposed to boost the high-frequency gain of a MOSFET by resonating out the inherent capacitances. The miniaturized lumped-element coupler in the circuit occupies a chip area of only similar to 2% compared to that of the conventional transmission-line coupler. The BA consumes 123 mW from a supply voltage of 1V. To the best of the authors' knowledge, the proposed CMOS BA presents the highest gain of 45.0 dB with a chip area of 0.97 x 0.63 mm(2) (core area: 0.78 x 0.43 mm(2)) among the published narrowband amplifiers with similar technologies and operation frequencies.
    URI: http://www.ieee.org/
    Appears in Collections:[電機工程學系] 期刊論文

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