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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A 1-V 45-GHz balanced amplifier with 21.5-dB gain using 0.18-mu m CMOS technology


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/42945


    Title: A 1-V 45-GHz balanced amplifier with 21.5-dB gain using 0.18-mu m CMOS technology
    Authors: Jin, Jun-De;Hsu, Shawn S. H.
    教師: 徐碩鴻
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Microwave Theory and Techniques,IEEE Transactions,Volume 56, Issue 3, March 2008,Page(s) 599 - 603
    Keywords: LOW-NOISE AMPLIFIERS
    POWER-AMPLIFIER
    BAND
    DESIGN
    GHZ
    Abstract: © 2008 Institute of Electrical and Electronics Engineers-A fully integrated balanced amplifier was realized in a standard 0.18-mu m CMOS technology. From the measured S-parameters, a gain up to 21.5 dB was achieved at 45.4 GHz under a supply voltage of only 1 V and a total power consumption of 89 mW. An effective technique, i.e., pi-type parallel resonance, was proposed to enhance the device and circuit frequency response. In addition, the semicoaxial line structure was used to reduce the signal loss and physical size of the Lange couplers in the amplifier. To the best of the authors' knowledge, the proposed balanced amplifier demonstrated the highest operation frequency and the lowest operation voltage among the published millimeter-wave amplifiers using a similar technology.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/handle/987654321/42945
    Appears in Collections:[電機工程學系] 期刊論文

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