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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Observation of differential capacitance images on slightly iron-contaminated p-type silicon


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/43589


    Title: Observation of differential capacitance images on slightly iron-contaminated p-type silicon
    Authors: Chang,M. N.;Chen,C. Y.;Pan,F. M.;Chang,T. Y.;Lei,T. F.
    教師: 張慶元
    Date: 2002
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS,Volume 5,Issue 8,Pages G69-G71,AUG 2002
    Keywords: silicon
    iron
    elemental semiconductors
    capacitance
    scanning probe microscopy
    interface states
    Abstract: © 2002 Electrochemical Society-Scanning capacitance microscopy (SCM) is employed to study defect distribution induced by iron contamination on p-type silicon wafers. For slightly contaminated samples, SCM reveals that iron contamination induces interface traps in the defect region. Interface traps perturb significantly the depletion behavior of the silicon surface. Iron contamination also decreases the lifetime and increases the density of minority carriers in the defect region. The defects induced by iron contamination exhibit an obvious bias-dependent SCM contrast. By differential capacitance images, one can examine the defect density distribution. The influence of these microscale defects on the electrical characteristics of the metal oxide semiconductor (MOS) capacitor cannot be observed by conventional capacitance-voltage measurement. © 2002 The Electrochemical Society.
    URI: http://www.electrochem.org/
    http://nthur.lib.nthu.edu.tw/handle/987654321/43589
    Appears in Collections:[電機工程學系] 期刊論文

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