National Tsing Hua University Institutional Repository:Observation of differential capacitance images on slightly iron-contaminated p-type silicon
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 15076080      Online Users : 169
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Journal / Magazine Articles  >  Observation of differential capacitance images on slightly iron-contaminated p-type silicon

    Please use this identifier to cite or link to this item:

    Title: Observation of differential capacitance images on slightly iron-contaminated p-type silicon
    Authors: Chang,M. N.;Chen,C. Y.;Pan,F. M.;Chang,T. Y.;Lei,T. F.
    Teacher: 張慶元
    Date: 2002
    Publisher: Electrochemical Society
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS,Volume 5,Issue 8,Pages G69-G71,AUG 2002
    Keywords: silicon
    elemental semiconductors
    scanning probe microscopy
    interface states
    Abstract: © 2002 Electrochemical Society-Scanning capacitance microscopy (SCM) is employed to study defect distribution induced by iron contamination on p-type silicon wafers. For slightly contaminated samples, SCM reveals that iron contamination induces interface traps in the defect region. Interface traps perturb significantly the depletion behavior of the silicon surface. Iron contamination also decreases the lifetime and increases the density of minority carriers in the defect region. The defects induced by iron contamination exhibit an obvious bias-dependent SCM contrast. By differential capacitance images, one can examine the defect density distribution. The influence of these microscale defects on the electrical characteristics of the metal oxide semiconductor (MOS) capacitor cannot be observed by conventional capacitance-voltage measurement. © 2002 The Electrochemical Society.
    Appears in Collections:[Department of Electrical Engineering] EE Journal / Magazine Articles

    Files in This Item:

    File SizeFormat


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback