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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46852


    Title: Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
    Authors: Chao, TS;Chien, CH;Hao, CP;Liaw, MC;Chu, CH;Chang, CY;Lei, TF;Sun, WT;Hsu, CH
    教師: 瞿志行
    Date: 1997
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Japanese Journal of Applied Physics, Volume 36, Issue 3B, 1997, Pages 1364-1367
    Keywords: nitrogen
    boron penetration
    pMOSFET
    X-ray photoelectron spectroscopy
    Abstract: The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p(+)-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
    URI: http://jjap.ipap.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46852
    Appears in Collections:[工業工程與工程管理學系] 期刊論文

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