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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  Suppression of boron penetration in BF2+-implanted poly-Si gate


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46856


    Title: Suppression of boron penetration in BF2+-implanted poly-Si gate
    Authors: Chao, TS;Chu, CH;Wang, CF;Ho, KJ;Lei, TF;Lee, CL
    教師: 瞿志行
    Date: 1996
    Publisher: Japanese Journal of Applied Physics
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Japanese Journal of Applied Physics, Volume 35, Issue 12A, DEC 1996, Pages 6003-6007
    Keywords: boron
    penetration
    stack poly-Si
    N2O oxide
    Abstract: In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor held-effect transistor (MOSFET) with the p(+)-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O-2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D-it of this sample are superior to all the other samples.
    URI: http://jjap.ipap.jp/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46856
    Appears in Collections:[工業工程與工程管理學系] 期刊論文

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