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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46876


    Title: INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI
    Authors: LIAUH, HR;CHEN, MC;CHEN, JF;CHEN, LJ;LUR, W;CHU, CH
    教師: 瞿志行
    Date: 1993
    Publisher: Elsevier
    Relation: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volume 74, Issues 1-2, 2 April 1993, Pages 134-137
    Keywords: GROWTH-KINETICS
    SILICON
    SI
    Abstract: An investigation on the influences of doping impurities on the formation of titanium silicide has been carried out. The formation of polycrystalline silicide was observed to be retarded by the presence of As in Ti/As+-Si samples compared with those in Ti/BF2+-Si samples. Superior thermal stability of TiSi2 was found to occur in BF2+ implanted samples than that in blank and As+ implanted samples. The resistance to island formation in BF2+ implanted samples is attributed to the retardation of grain growth by the segregation of fluorine atoms at the grain boundaries.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46876
    Appears in Collections:[工業工程與工程管理學系] 期刊論文

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