National Tsing Hua University Institutional Repository:INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI
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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI


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    题名: INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI
    作者: LIAUH, HR;CHEN, MC;CHEN, JF;CHEN, LJ;LUR, W;CHU, CH
    教師: 瞿志行
    日期: 1993
    出版者: Elsevier
    關聯: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volume 74, Issues 1-2, 2 April 1993, Pages 134-137
    关键词: GROWTH-KINETICS
    SILICON
    SI
    摘要: An investigation on the influences of doping impurities on the formation of titanium silicide has been carried out. The formation of polycrystalline silicide was observed to be retarded by the presence of As in Ti/As+-Si samples compared with those in Ti/BF2+-Si samples. Superior thermal stability of TiSi2 was found to occur in BF2+ implanted samples than that in blank and As+ implanted samples. The resistance to island formation in BF2+ implanted samples is attributed to the retardation of grain growth by the segregation of fluorine atoms at the grain boundaries.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46876
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