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    National Tsing Hua University Institutional Repository > 工學院  > 工業工程與工程管理學系 > 期刊論文 >  INFLUENCE OF POINT-DEFECTS ON FORMATION OF FLUORINE BUBBLES AND CHARACTERIZATION OF DEFECTS IN BF2(+) IMPLANTED SILICON


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46881


    Title: INFLUENCE OF POINT-DEFECTS ON FORMATION OF FLUORINE BUBBLES AND CHARACTERIZATION OF DEFECTS IN BF2(+) IMPLANTED SILICON
    Authors: CHU, CH;YANG, JJ;CHEN, LJ
    教師: 瞿志行
    Date: 1993
    Publisher: Elsevier
    Relation: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, Volume 74, Issues 1-2, 2 April 1993, Pages 138-141
    Keywords: TRANSMISSION ELECTRON-MICROSCOPE
    BF2+-IMPLANTED SILICON
    RESIDUAL DEFECTS
    SI
    GROWTH
    Abstract: The effects of point defect injection on the the formation of fluorine bubbles in BF2+ implanted silicon have been investigated by transmission electron microscopy (TEM). Excess silicon self-interstitial injection due to oxidation were found to be most effective in alleviating the formation of fluorine bubbles. Microstructural defects have been characterized by high resolution TEM.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/46881
    Appears in Collections:[工業工程與工程管理學系] 期刊論文

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