English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 13385724      Online Users : 51
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 會議論文  >  Development of an ion energy flux sensor for plasma processing


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47003


    Title: Development of an ion energy flux sensor for plasma processing
    Authors: Leou,K. C.;Lai,S. C.;Cheng,C. H.;Lin,C.;Tsai,C. H.
    教師: 林強
    Date: 2001
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts, Las Vegas, NV, 17-22 June 2001, Pages 476
    Keywords: Sensors
    Plasma applications
    Ion bombardment
    Polysilicon
    Real time systems
    Feedback control
    Plasma etching
    Charge coupled devices
    Electric potential
    Emission spectroscopy
    Abstract: Ion bombardment on substrate plays a crucial role in most plasma processing of materials. For instance, in etching of Poly-Si using chlorine discharges, in order to obtain a desired etch profiles, the process often is operated at the ion-enhanced regime where the etch rate and etched profile are strongly correlated with the total ion energy flux incident on the wafer surface. Therefore, a better process control can be achieved if one can monitor the ion energy flux in a real-time manner or even implement a real-time feedback control of the etch process by using a energy flux sensor. In this study, the relative value of ion energy flux is indirectly determined by combining the measurement results from two different diagnostic tools which both are real-time and non-intrusive measurements. To measure the ion energy, an impedance meter (AE-RFZ60) is used to measure the peak RF voltage on the wafer chuck, which has been shown to monotonically increases with the sheath voltage and hence the energy of ions incident on wafer surface. The ion flux information is extracted from the Cl+ line intensity of the optical emission spectroscopy measurements. The relative ion energy flux is determined by the product of these two measured values, initial test of the idea in a Poly-Si high density plasma etcher with Cl2 plasmas shows that the etch rate scales linearly with the measured "ion energy flux" for a wide range of operating conditions, which were designed by a standard CCD procedure. This tool will be further integrated with other sensors to form a real-time control system based on plasma properties.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47003
    Appears in Collections:[工程與系統科學系] 會議論文

    Files in This Item:

    File Description SizeFormat
    2060130030002.pdf81KbAdobe PDF268View/Open


    在NTHUR中所有的資料項目都受到原著作權保護,僅提供學術研究及教育使用,敬請尊重著作權人之權益。若須利用於商業或營利,請先取得著作權人授權。
    若發現本網站收錄之內容有侵害著作權人權益之情事,請權利人通知本網站管理者(smluo@lib.nthu.edu.tw),管理者將立即採取移除該內容等補救措施。

    SFX Query

    與系統管理員聯絡

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback