National Tsing Hua University Institutional Repository:Atomic and electronic structure of interfaces at SiC studied by indirect super HRTEM and electron spectroscopy imaging
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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 會議論文  >  Atomic and electronic structure of interfaces at SiC studied by indirect super HRTEM and electron spectroscopy imaging


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    題名: Atomic and electronic structure of interfaces at SiC studied by indirect super HRTEM and electron spectroscopy imaging
    作者: Ichinose,Hideki;Chen,Fu-Rong;Takuma,Eriko;Yan,J. Y.;Kai,J. J.
    教師: 開執中
    日期: 2002
    出版者: Materials Research Society
    關聯: Nanostructured Interfaces. Symposium (Mater. Res. Soc. Symposium Proceedings, Vol.727), 2002, p 169-75
    關鍵詞: Calculations
    Wavelet transforms
    Algorithms
    Grain boundaries
    Electron spectroscopy
    Electronic structure
    Transmission electron microscopy
    Silicon carbide
    Interfaces (materials)
    Atomic physics
    摘要: Obtaining electronic and atomic structure of material simultaneously is very important for developing the nano-technology. In this paper, we demonstrate that atomic and electronic structure of an interface can be extracted with combination of Gerchberg-Saxton indirect microscopy and electron spectroscopy imaging (ESI) technique. Basically, Gerchberg-Saxton algorithm includes two projections. Projection in the real space is a maximum entropy (ME) de-convolution process and in reciprocal space is an amplitude substitution process. It has been shown that Gerchberg-Saxton algorithm can extend the structural resolution to near 0.1 nm. An application case of Gerchberg-Saxton algorithm to solve the atomic structure for 3C-polytypic SiC boundary is shown. ESI spectrum processed by FFT interpolation, maximum entropy de-convolution and wavelet transformation allow us to extract 2-dimensional map of the sp2/sp3 with a sub-nanometer resolution. Grain boundary and interface at SiC are good candidates for this study, since the bond distance of Si-C is slightly less than 0.1 nm which is not routinely resolvable using a FEG TEM and Si-L (99eV) and C-K-edges (283 eV) locate in a reasonable energy range. The resultant electronic structure can be compared with that calculated using WIEN97. An example of quantitative analysis on 2-dimensional sp3/sp2 map deduced from the C K-edge of ESI spectra acquired from 6H-SiC is given.
    URI: http://www.mrs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47120
    顯示於類別:[工程與系統科學系] 會議論文

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