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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47235


    Title: Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
    Authors: Yung-Chun Wu;Ting-Chang Chang;Po-Tsun Liu;Chi-Shen Chen;Chun-Hao Tu;Hsiao-Wen Zan;Ya-Hsiang Tai;Chun-Yen Chang
    教師: 吳永俊
    Date: 2005
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES, Institute of Electrical and Electronics Engineers, Volume 52, Issue 10, OCT 2005, Pages 2343-2346
    Keywords: THIN-FILM TRANSISTORS
    Abstract: This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47235
    Appears in Collections:[工程與系統科學系] 期刊論文

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