English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14272207      Online Users : 81
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47291

    Title: Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
    Authors: Chun-Hao Tu;Ting-Chang Chang;Po-Tsun Liu;Chih-Hung Chen;Che-Yu Yang;Yung-Chun Wu;Hsin-Chou Liu;Li-Ting Chang;Chia-Chou Tsai;Simon M. Sze;Chun-Yen Chang
    教師: 吳永俊
    Date: 2006
    Publisher: Electrochemical Society Inc.
    Relation: Journal of the Electrochemical Society, v 153, n 9, p G815-G818, 2006
    Abstract: Solid phase recrystallired polycryslalline silicon thin-ulm transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near ihe drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found mat fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5 × 1015 cm-2, however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.
    URI: www.electrochem.org/
    Appears in Collections:[工程與系統科學系] 期刊論文

    Files in This Item:

    File SizeFormat


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback