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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Real-time X-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47481


    Title: Real-time X-ray scattering study of growth behavior of sputter-deposited LaNiO3 thin films on Si substrates
    Authors: Hsin-Yi Lee;Liang, K.S.;Chih-hao Lee;Tai-Bor Wu
    教師: 李志浩
    Date: 2000
    Publisher: Materials Research Society
    Relation: JOURNAL OF MATERIALS RESEARCH, Materials Research Society, Volume 15, Issue 12, DEC 2000, Pages 2606-2611
    Keywords: FERROELECTRIC MEMORIES
    PREFERRED ORIENTATION
    REFLECTIVITY
    ELECTRODE
    PB(ZR0.53TI0.47)O-3
    CRYSTALLIZATION
    Abstract: Real-time X-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ X-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ X-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of X-ray diffraction, it was found that a crossover of the growth orientation from the (110) to the (100) direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value
    URI: http://www.mrs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47481
    Appears in Collections:[工程與系統科學系] 期刊論文

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