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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrate

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47505

    Title: Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrate
    Authors: Tien-Ko Wang;Mei-Ya Wang;Fu-Hsiang Ko;Chia-Lian Tseng
    教師: 王天戈
    Date: 2001
    Publisher: Elsevier
    Relation: Applied Radiation and Isotopes, v 54, n 5, May 2001, page 811-20
    Keywords: ultraviolet lithography
    surface contamination
    surface cleaning
    silicon compounds
    semiconductor process modelling
    radioactive tracers
    Abstract: The radioactive tracer technique was applied to investigate the out-diffusion of the transition metals (Cu, Fe and Co) from deep ultraviolet (DUV) photoresist into underlying substrate. Two important process parameters, viz. baking temperatures and substrate types (i.e., bare silicon, polysilicon, silicon oxide and silicon nitride), were evaluated. Results indicate that the out-diffusion of Co is insignificant, irrespective of the substrate type and baking temperature. The outdiffusion of Cu is significant for substrates of bare silicon and polysilicon but not for silicon oxide and nitride; for Fe, the story is reversed. The substrate type appears to strongly affect the diffusion, while the baking temperature does not. Also, the effect of solvent evaporation was found to play an important role in impurity diffusion. Using the method of numerical analysis, a diffusion profile was depicted in this work to describe the out-diffusion of metallic impurities from photoresist layer under various baking conditions. In addition, the effectiveness of various wet-cleaning recipes in removing metallic impurities such as Cu, Fe and Co was also studied using the radioactive tracer technique. Among the six cleaning solutions studied, SC2 and SPM are the most effective in impurity removal. An out-diffusion cleaning model was first proposed to describe the cleaning process. A new cleaning coefficient, k(T), was suggested to explain the cleaning effect. The cleaning model could explain the tracer results.
    URI: http://www.elsevier.com/
    Appears in Collections:[工程與系統科學系] 期刊論文

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