National Tsing Hua University Institutional Repository:The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers
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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers


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    题名: The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers
    作者: Yin,K. -M;Chang,L.;Chen,F. -R;Kai,J. -J;Chiang,C. -C;Ding,P.;Chin,B.;Zhang,H.;Chen,F.
    教師: 陳福榮
    日期: 2001
    出版者: Elsevier
    關聯: Thin Solid Films, Elsevier, Volume 388, Issues 1-2, 1 June 2001, Pages 15-21
    关键词: Interdiffusion (solids)
    Ionization
    Oxidation
    Metallizing
    Substrates
    Thermodynamic stability
    Grain boundaries
    Deposition
    Transmission electron microscopy
    Interfaces (materials)
    Annealing
    Silicon wafers
    Tantalum
    Copper
    Semiconducting films
    Multilayers
    摘要: Interfacial reactions of Cu/Ta/Si multilayers after thermal treatment were investigated using transmission electron microscopy. The Cu and Ta films were deposited onto Si wafer by ionized metal plasma technique. The samples were then annealed at 400, 500, 550 and 600°C in purified Ar atmosphere for 30 min. The effect of oxygen in the atmosphere on the thermal stability is studied. An interlayer of Ta oxide was observed between Cu and Ta after annealing at 400, 500 and 550°C. It is evident that oxygen as residual gas from furnace ambient can diffuse through Cu grain boundaries to form the Ta oxide layer. After annealing at 600°C, Si reacted with Ta to form TaSi2 at the interface of Ta and Si, in the meantime Cu3Si with surrounding SiO2 formed in the Si substrate. The thermal stability of the Cu/Ta/Si samples was also examined in a two-step annealing treatment of 400°C for 30 min, followed by 600°C for 30 min. Even though interlayers of crystalline Ta-Cu oxide and Ta silicide were formed, Cu silicides were not observed. Formation of TaOx interlayer at the first stage of 400°C annealing may inhibit Cu diffusion into the Si substrate in the second stage of the 600°C annealing process. © 2001 Elsevier Science B.V.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47669
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