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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47681


    Title: The effect of oxygen on the interfacial reactions of Cu/TaNx/Si multilayers
    Authors: Yin,K. -M;Chang,L.;Chen,F. -R;Kai,J. -J
    教師: 陳福榮
    Date: 2001
    Publisher: Elsevier
    Relation: Materials Chemistry and Physics, Elsevier, Volume 71, Issue 1, 1 August 2001, Pages 1-6
    Keywords: Multilayers
    Interfaces (materials)
    Copper
    Tantalum compounds
    Silicon nitride
    Silicon wafers
    Annealing
    Deposition
    Ionization
    Plasma applications
    Crystal microstructure
    Transmission electron microscopy
    Grain boundaries
    Oxidation
    Abstract: Interfacial reactions of Cu/TaNx/Si and silicon nitride/Cu/TaNx/Si multilayers after thermal treatment at 500 and 700°C under an ambient with residual oxygen were investigated using an energy-filtered TEM (EFTEM). The Cu and TaNx films were deposited onto the Si (0 0 1) wafer by ionized metal plasma (IMP) technique. An interlayer of TaOxNy was observed between Cu and TaNx diffusion barrier in the Cu/TaNx/Si sample after 500°C annealing. It is evident that oxygen diffused through the Cu grain boundaries and promotes the oxidation of the Ta nitride barrier layer to form the TaOxNy. It is also found that the as-deposited TaNx (x [similar to] 0.5) film with nano-crystalline microstructure would transform into Ta2N structure with large grain character after 500°C heat treatment. After 700°C annealing, not only the TaNx barrier layer transformed into Ta2N but the silicidation of Cu to Cu3Si and TaNx to Ta5Si3 occurred. However, no TaOxNy interlayer was observed. This may result from the preferable oxidation of Cu3Si that may suppress the oxidation of TaNx. Nevertheless, in the silicon nitride capped (silicon nitride/Cu/TaNx/Si) case, there was no TaOxNy interlayer observed in the 500°C annealed specimen. And the interfacial reaction in the silicon nitride/Cu/TaNx/Si annealed specimen at 700°C also showed much less severe extent than the sample without capping. Experiments show that the oxygen in the ambient enhances the oxidation at 500°C and silicidation at 700°C. © 2001 Elsevier Science B.V.
    URI: http://www.elsevier.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47681
    Appears in Collections:[工程與系統科學系] 期刊論文

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