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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47706

    Title: Advance in next Century nanoCMOSFET research
    Authors: Hwang,Huey-Liang;Chiou,Yan-Kai;Chang,Che-Hao;Wang,Chen-Chan;Lee,Kun-Yu;Wu,Tai-Bor;Kwo,Raynien;Hong,Minghwei;Chang-Liao,Kuei-Shu;Lu,Chun-Yuan;Lu,Chun-Chang;Chiu,Fu-Chien;Chen,Chun-Heng;Lee,Joseph Ya-Min;Chin,Albert
    教師: 張廖貴術
    Date: 2007
    Publisher: Elsevier
    Relation: Applied Surface Science, Elsevier, Volume 254, Issue 1, 31 October 2007, Pages 236-241
    Keywords: CMOS integrated circuits
    Dielectric materials
    Integrated circuits
    MOSFET devices
    Abstract: It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. © 2007 Elsevier B.V. All rights reserved.
    URI: http://www.elsevier.com/
    Appears in Collections:[工程與系統科學系] 期刊論文

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