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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47722

    Title: Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition
    Authors: Chang,L.;Yan,J. E.;Chen,F. R.;Kai,J. J.
    教師: 陳福榮
    Date: 2000
    Publisher: Elsevier
    Relation: Diamond and Related Materials, Elsevier, Volume 9, Issues 3-6, April-May 2000, Pages 283-289
    Keywords: Nucleation
    Crystal orientation
    Electron energy loss spectroscopy
    Transmission electron microscopy
    Composition effects
    Single crystals
    Silicon carbide
    Diamond films
    Epitaxial growth
    Plasma enhanced chemical vapor deposition
    Abstract: Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111} parallel 6H-SiC {0001} and diamond [Left Angle Bracket] 110 [Right Angle Bracket] parallel 6H-SiC [Left Angle Bracket] 112 over-bar 0 [Right Angle Bracket] .
    URI: http://www.elsevier.com/
    Appears in Collections:[工程與系統科學系] 期刊論文

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