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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47740

    Title: Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices
    Authors: Cheng,Chin-Lung;Chang-Liao,Kuei-Shu;Huang,Ching-Hung;Wang,Tien-Ko
    教師: 張廖貴術
    Date: 2005
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 86, Issue 21, MAY 23 2005
    Keywords: MOS devices
    Electric conductance
    Electron traps
    Hole traps
    Charge carriers
    Dielectric materials
    Interfaces (materials)
    Leakage currents
    Secondary ion mass spectrometry
    Abstract: This work examined the effects of bulk nitrogen in HfOx Ny gate dielectric on current-conduction and charge trapping of metal-oxide-semiconductor devices. The nitrogen concentration profiles in HfOx Ny gate dielectric were adjusted by Hf target sputtered in an ambient of modulated nitrogen flow. The current-conduction mechanisms of HfOx Ny film comprised of various nitrogen concentration profiles at the low- and high-electrical field were dominated by Schottky emission and Frenkel-Poole emission, respectively. The trap energy level involved in Frenkel-Pool conduction was estimated to be around 0.8 eV. Smaller stress-induced leakage current and flat-band voltage shift were obtained for devices with HfOx Ny dielectric containing less bulk nitrogen, attributable to less interface strainstress and bulk trap. © 2005 American Institute of Physics.
    URI: http://www.aip.org/
    Appears in Collections:[工程與系統科學系] 期刊論文

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