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    National Tsing Hua University Institutional Repository > 原子科學院  > 工程與系統科學系 > 期刊論文 >  Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47743


    Title: Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section
    Authors: Lin, YF;Jian, WB;Wang, CP;Suen, YW;Wu, ZY;Chen, FR;Kai, JJ;Lin, JJ
    教師: 陳福榮
    Date: 2007
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS, American Institute of Physics, Volume 90, Issue 22, MAY 28 2007
    Keywords: FIELD-EFFECT TRANSISTORS
    ELECTRICAL-TRANSPORT
    ROOM-TEMPERATURE
    SCHOTTKY DIODES
    THIN-FILMS
    FABRICATION
    GROWTH
    Abstract: Single crystalline ZnO nanowires (NWs) with a circular cross section and similar to 40 nm in diameter have been synthesized and utilized to fabricate two-contact ZnO NW devices. The electrical properties of the NW devices can be categorized into two classes according to the magnitude of their room-temperature resistances. I-V curves of low-resistance devices exhibit downward bending features and their temperature dependent resistances demonstrate thermal activation transport in the ZnO NWs. The high-resistance NW devices can be modeled as back-to-back Schottky contacts and the electron transport through the contacts reveals a variable-range-hopping mechanism. (C) 2007 American Institute of Physics.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47743
    Appears in Collections:[工程與系統科學系] 期刊論文

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