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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47824


    Title: Observations of segregation of Al in AlGaN alloys
    Authors: Chang, L;Lai, SK;Chen, FR;Kai, JJ
    教師: 陳福榮
    Date: 2001
    Publisher: John Wiley & Sons
    Relation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, John Wiley & Sons, Volume 188, Issue 2, 2001, Pages 811-814
    Keywords: THREADING DISLOCATIONS
    GAN
    MICROSCOPY
    DEFECTS
    GROWTH
    FILMS
    Abstract: Transmission electron microscopy has been used to characterize Al segregation in Al0.1Ga0.9N and Al0.3Ga0.7N alloys grown by metal organic chemical vapor deposition on 6H-SiC. It has been found that an interlayer of AlGaN alloy with much higher Al content was formed at first, followed by normal growth of nominal composition of AlGaN alloy. In Al0.1Ga0.9N and Al0.3Ga0.7N films. dislocation lines were also found to have more Al segregated than those regions free of dislocations in the matrix. Furthermore, it shows that more Al atoms segregate to an edge dislocation than to a screw one.
    URI: http://www.wiley.com/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/47824
    Appears in Collections:[工程與系統科學系] 期刊論文

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