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    National Tsing Hua University Institutional Repository > 工學院  > 動力機械工程學系 > 期刊論文 >  Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/50454


    Title: Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate
    Authors: Jiang, Hongrui;Yoo, Kyutae;Yeh, Jer-Liang Andrew;Li, Zhihong;Tien, Norman C.
    教師: 葉哲良
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: JOURNAL OF MICROMECHANICS AND MICROENGINEERING, Institute of Electrical and Electronics Engineers, Volume 12, Issue 1, JAN 2002, Pages 87-95
    Keywords: Silica
    Substrates
    Reactive ion etching
    Micromachining
    Thermooxidation
    Deposition
    Surfaces
    Integrated circuits
    Capacitors
    Electric transformers
    Abstract: A silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-μm-deep silicon dioxide blocks.
    URI: http://www.ieee.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/50454
    Appears in Collections:[動力機械工程學系] 期刊論文

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